Alex writes with this excerpt from TechSpot: “Samsung Electronics has announced that it completed development of the industry’s first DDR4 DRAM module last month, using 30nm class process technology, and provided 1.2V 2GB DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing. The new DDR4 DRAM module can achieve data transfer rates of 2.133Gbps at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. In a notebook, the DDR4 module reduces power consumption by 40 percent compared to a 1.5V DDR3 module. The module makes use of Pseudo Open Drain (POD) technology, which allows DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.”

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Originally posted here:
Samsung Develops Power-Sipping DDR4 Memory